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Materials And Components Research Laboratory Components And Devices Research Center Matsushita Elect | 論文
- Surface Modification of Glassy Carbon Using Pulsed KrF Excimer Laser(Surfaces, Interfaces, and Films)
- Highly Oriented Graphite Layer Obtaind on WC-Co by Laser Modification : Surfaces, Interfaces, and Films
- Picosecond Pulsed X-Ray Diffraction from a Pulsed Laser Heated Si(111)
- Time-Resolved X-ray Shadowgraphy Experiment of Laser Ablation of Aluminum using Laser-Induced Picosecond Pulsed X-rays
- Smoothing of Si Trench Sidewall Surface by Chemical Dry Etching and Sacrificial Oxidation
- Striations on Si Trench Sidewalls Observed by Atomic Force Microscopy
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Light Emitting Properties of Linear π-Conjugated Poly(arylene)s
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Characterization of Epitaxially Grown CeO_2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- Superconducting Bi_2Sr_2CaCu_2O_ Single Films Grown on SrTiO_3 Substrate by the Liquid Phase Epitaxial Method
- Preparation of Single Crystals Containing the High-T_c (above 100 K) Phase of a Bi-Sr-Ca-Cu-O Superconductor
- Synthesis and Decomposition of the High-T_c Phase of a Pb-Doped Bi-Sr-Ca-Cu-O Superconductor
- A New Method for Improving the Superconducting Transition Temperature of Platy ErBa_2Cu_3O_ Single Crystals
- Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO_2 Layers on Siby Detecting ^O Added for Stoichiometry
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO_2 Layers and Si Substrates