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Marine Resources and Environment Institute, National Institute of Advanced Industrial Science and Technology (AIST) | 論文
- Translational Phase Domains in the Cation Sublattice of Chalcopyrite Compounds
- Morphology, Structure and Photoluminescence Properties of Zinc Oxide Films Prepared by Excimer Laser Irradiation of Sol-Gel-Derived Precursors : Semiconductors
- A Novel Method for the Preparation of Green Photoluminescent Undoped Zinc Oxide Film Involving Excimer Laser Irradiation of a Sol-Gel-Derived Precursor
- The Initial Growth Stage of the InAs Quantum Well Structures on Variously Oriented GaAs Substrates
- Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth and Properties of CuInSe_2
- A Molecular and Jon-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Jon Beam
- Molecular Beam Epitaxy of InP Using Low Energy P^+ Ion Beam
- Photoluminescence of Indirect-Band-Gap GaAs_P_x (x=0.52) Implanted with Nitrogen Ions
- Hot Implantation of Nitrogen Ions into GaAs_P_x (x=0.36)
- Photoluminescence of Nitrogen-Implanted GaAs_P_x (x=0.44) near the Direct-Indirect-Transition Point
- Laser Emission in Nitrogen-Implanted GaAs_P_x(x=0.36 and 0.43)