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Liquid Crystal Lab. Sharp Corp. | 論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
- V-t Characteristics of SF6 Gap Disturbed by a Needle-Shaped Protrusion under Oscillating Transient Overvoltages
- Characteristics of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide and Thin-Film-Transistor Application
- Preparation of Superconducting Bi-Pb-Sr-Ca-Cu-O Glass Ceramics with T_=106 K
- Formation of the High-T_c Phase of Bi_Pb_xSr_Ca_Cu_O_y (0 ≦ x ≦ 0.05)
- Effect of Annealing on Superconductivity in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Intermediate Pressing on Superconducting Characteristics in Bi-Pb-Sr-Ca-Cu-O System
- Influence of Cooling Rate on Superconducting Characteristics of Bi-Pb-Sr-Ca-Cu-O Ceramics
- Superconducting Characteristics and Microstructure of Bi-Pb-Sr-Ca-Cu-O Ceramics : Electrical Properties of Condensed Matter
- Critical Current Density of Bi-Pb-Sr-Ca-Cu-O Superconducting Ceramics : Electrical Properties of Condensed Matter
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Surface Modification of Niobium (Nb) by Atomic Force Microscope (AFM) Nano-Oxidation Process
- Fabrication and Characterization of Nb/Nb Oxides-Based Single Electron Transistors (SETs)
- Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- V-Shaped Gate High Electron Mobility Transistor (VHEMT)
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced Reaction
- Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination