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LSI Basic Research Laboratory, Microelectronics Research Laboratories, NEC Corporation | 論文
- New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes
- Dependence of Frequency and Pressure on Electron Energy Distribution Functionsin Low Pressure Plasma
- Ion and Neutral Temperatures in a Novel Ultrahigh-Frequency Discharge Plasma
- Time-Modulated Electron Cyclotron Resonance Plasma Discharge for Controlling the Polymerization in SiO_2 Etching
- New Radical-Control Method for SiO_2 Etching with Non-Perfluorocompound Gas Chemistries
- Doppler-Shifted Laser-Induced Fluorescence Diagnostics of an Ultrahigh-Frequency Discharge Plasma
- Highly Selective and Highly Anisotropic SiO_2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma