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LAAS-CNRS | 論文
- Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P^+ Metal-Oxide-Semiconductor Transistors Gates : Semiconductors
- Charged Defects at the Interface between Directly Bonded Silicon Wafers
- Measurement of the temperature distribution of resistively heated nanowires using CdSe/ZnS nanocrystals (特集 プロダクションテクノロジー研究会)
- Oxidation Properties of Nitrogen-Doped Silicon Films Deposited from Si_2H_6 and NH_3
- A Comprehensive Study of Thin Rapid Thermal Oxide Films
- Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si_2H_6 and Annealing
- Semi-Insulating Polycrystalline Silicon by Low Pressure Chemical Vapour Deposition from Disilane and Nitrous Oxide
- Electronic Defect Levels in Ultra-Shallow p+n-Junctions Formed by Low-Energy B Ion Implantation into Ge-Preamorphized Silicon
- Impact of Internal and External Software Faults on the Linux Kernel(Dependable Software)(Dependable Computing)
- Impact of Internal and External Software Faults on the Linux Kernel
- Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals
- Recombination Activity in Directly Bonded High Resistivity Silicon Wafers Measured by the Photoconductance Decay Method
- Algorithms for rough terrain trajectory planning
- Detection of Gold Colloid Adsorption at a Solid/Liquid Interface Using Micromachined Piezoelectric Resonators