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Korea Photonics Technology Institute | 論文
- A Single Gap Transflective Display with Single Gamma Curve in the Fringe Field Switching Mode
- Reduction of Viewing-Angle Dependent Color Shift in a Reflective Type Cholesteric Liquid Crystal Color Filter
- Effect of calcination of the mixture of alumina powder and aqueous magnesium solution on the microstructure and properties of sintered bodies
- Relevance of the Fracture Strength to Process-Related Defects in Alumina Ceramics
- Low error operation of high T_c superconducting single-flux quantum simple circuits
- Laser Emission under ^4F_ and ^4F_ Pumping in Nd : LSB Micro-Laser
- High Quality Crack-Free GaN-Based Epitaxy on Patterned Si(111) Substrate
- Enhanced Optical Output Power of Tunnel Junction GaN-Based Light Emitting Diodes with Transparent Conducting Al and Ga-Codoped ZnO Thin Films
- Structural Optimization of High-Power AlGaInP Resonant Cavity Light-Emitting Diodes for Visible Light Communications
- Formation of Thermally Stable AgCu-Based Reflectors by a Two Step Alloy Method for Vertical Light-Emitting Diodes
- InGaN-Based p-i-n Solar Cells with Graphene Electrodes
- High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- Polarization field effect on the electrical and electronic band characteristics at the interface between metal and strained GaN/InGaN layer
- Negative-Voltage Electrostatic Discharge Characteristics of Blue Light-Emitting Diodes Using an Extended n-Electrode onto Plasma Treated p-GaN
- InGaN/AlGaN Ultraviolet Light-Emitting Diode with a Ti3O5/Al2O3 Distributed Bragg Reflector
- Two-Dimensional Hexagonal Lattice Photonic Crystal Band-Edge Laser Patterned by Nanosphere Lithography
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate
- Stress Engineering by Controlling Sapphire Substrate Thickness in 520 nm GaN-Based Light-Emitting Diodes
- The Polarity Effect on the Photoelectrochemical Properties of Ga- and N-Face Free-Standing GaN Substrate