Polarization field effect on the electrical and electronic band characteristics at the interface between metal and strained GaN/InGaN layer

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Jang Ja-soon

  Korea University Research Institute Of Engineering And Technology

• Jeon Seong-ran

  Korea Photonics Technology Institute Epitaxy Laboratory

• Jeon Seong-ran

  Korea Photonics Technology Institute

• LEE Hyun

  Pohang Accelerator Laboratory (PAL)

• JUNG Min-Chul

  Pohang Accelerator Laboratory (PAL)

• SHIN Hyun-Jun

  Pohang Accelerator Laboratory (PAL)

関連論文

• High Quality Crack-Free GaN-Based Epitaxy on Patterned Si(111) Substrate
• InGaN-Based p-i-n Solar Cells with Graphene Electrodes
• High electrical stress influence on reliability characteristics of polarization-induced GaN/InGaN MQW LEDs
• Polarization field effect on the electrical and electronic band characteristics at the interface between metal and strained GaN/InGaN layer
• Real-Time Observation of Temperature-Dependent Strain in Poly(3-hexylthiophene) Crystals in a Mixed Donor and Acceptor Thin Film
• Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate

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