スポンサーリンク
Kagami Memorial Laboratory for Material Science and Technology, Waseda University | 論文
- Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation
- Hihg-Density Nanoetchpit-Array Fabrication on Si Surface Using Ultrathin SiO_2 Mask
- New Process for Si Nanopyramid Array(NPA)Fabrication by Ion-Beam Irradiation and Wet Etching
- Reduction of Fluctuation in Semiconductor Conductivity by One-by-One Ion Implantation of Dopant Atoms
- Morphology Control of Cu Clusters Formed on H-Si (111) Surface in Solution by Si Potential
- Novel Process for High-Density Buried Nanopyramid Array Fabrication by Means of Dopant Ion Implantation and Wet Etching
- Optical Properties of Gd_2(MoO_4)_3 Studied by High Accuracy Universal Polarimeter (HAUP) Method
- Direct Confirmation of the High Coherency of the Electron Beam from a Nanotip