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It Convergence And Component Laboratory Electronics And Telecommunications Research Institute | 論文
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Electrical characterization of nonvolatile phase-change memory devices using Sb-rich Ge-Sb-Te alloy films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
- Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors
- Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask