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Interuniversity Microelectronics Center | 論文
- Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates
- Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
- Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
- Breakdown and Recovery of Thin Gate Oxides
- Fabrication and Characterization of Artificial Crystal Originated Particles
- Impact of Organic Contamination on Thin Gate Oxide Quality
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- Charge Transport after Hard Breakdown in Gate Oxides