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Inter-University Semiconductor Research Center (ISRC) | 論文
- Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer
- Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current(Session 9B : Nano-Scale devices and Physics)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- A New Cone-Type 1T DRAM Cell(Session 2A : Memory 1)
- Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current(Session 9B : Nano-Scale devices and Physics)
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
- Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
- Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering (GIBL)(Session4A: Nonvolatile Memory)
- 3-dimensional Terraced NAND (3D TNAND) Flash Memory(Session4A: Nonvolatile Memory)
- Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering (GIBL)(Session4A: Nonvolatile Memory)
- 3-dimensional Terraced NAND (3D TNAND) Flash Memory(Session4A: Nonvolatile Memory)
- An Analytic Current-Voltage Equation for Top-contact OTFTs Including the Effects of Variable Series Resistance
- Low Hysteresis Organic Thin-Film Transistors and Inverters with Hybrid Gate Dielectric
- Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect(Session 8A : Memory 2)
- Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer
- Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices(Novel MOSFET Structures,Fundamentals and Applications of Advanced Semiconductor Devices)
- Capacitorless DRAM Cell with Highly Scalable Surrounding Gate Structure
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
- Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)