スポンサーリンク
Institute of industrial Science, University of Tokyo | 論文
- Estimation of Electrically-Pumped Dynamic Nuclear Polarization in a Quantum Hall Device Using Tilted Magnetic Fields
- 36. 特異な形状をもつ活性炭の開発(第58回日本医科器械学会大会)
- Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
- Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
- Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
- Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications
- Facile Synthesis of β(1→6)-Linked Gluco-Oligosaccharide Derivative
- Synthesis of Mannos Branched Deoxy-Glucan Derivative by Polymerization of Disaccharide Monomer
- Future Electron Devices and SOI Technology : Semi-Planar SOI MOSFETs with Sufficient Body Effect
- Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors
- Evidence for Creation of Gallium Antisite Defect in Surface Region of Bleat-Treated GaAs
- Undersea co-seismic crustal movements associated with the 2005 Off Miyagi Prefecture Earthquake detected by GPS/acoustic seafloor geodetic observation
- GPS/Acoustic seafloor geodetic observation : method of data analysis and its application
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect Transistor Memories with Silicon Nanocrystal Floating Gates
- Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin-Body Silicon Nanocrystal Memories
- Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories
- Optimum Device Parameters and Scalability of Variable Threshold Voltage Complementary MOS (VTCMOS)
- Optimum Condutions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs
- Optimum Conditions of Body Effect Factor and Substrate Bias in Variable Threshold Voltage MOSFETs