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Institute of Microelectronics, Tsinghua University, Beijing 100084, China | 論文
- Investigation on Annealing and Etching Effects for Pt/Bi3.15Nd0.85Ti3O12/Pt Ferroelectric Capacitors
- Characteristics of Fatigue Induced by Distribution of Defect Charges in SrBi2Ta2O9 Capacitors
- First-Principles Study of Silicon Nanowires with Different Surfaces
- Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
- Synthesis and Thermal Conductivity Measurement of High-Integrity Ultrathin Oxygen-Implanted Buried Oxide Layers
- Molecular Dynamics Models of Several Hundreds of Atoms for Back-End-of-Line Dielectrics
- Detection of a Charged Two-Level System by Using the Kondo and the Fano--Kondo Effects in Quantum Dots
- Detection of a Charged Two-Level System by Using the Kondo and the Fano-Kondo Effects in Quantum Dots (Special Issue : Solid State Devices and Materials)