Molecular Dynamics Models of Several Hundreds of Atoms for Back-End-of-Line Dielectrics

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概要

• 論文の詳細を見る

• Porous low-$k$ materials with low dielectric constant and reasonable mechanicalal property are demanded urgently for microelectronic applications. In this paper, we proposed a pure classic Molecular Dynamics based simulation method to create atomic models for amorphous dielectrics. Elaborately generating an initial guess for the Molecular Dynamics relaxation allows the structure to contain several hundreds of atoms and realizes pores and special local features at one time. Both mechanical and dielectric properties can be obtained within the classic Molecular Dynamics framework. This method has been applied to the modeling of the microstructure of SiO2 system as an example. In a 360-atom SiO2 system, we can modify the size of the pores inside the dielectrics. The calculated properties are consistent with the experimental results.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Wang Yan

  Institute Of Hydrobiology Jinan University

• Wang Yan

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

• Gao Mingzhi

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

• Zhang Jinyu

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

• Yu Zhiping

  Institute of Microelectronics, Tsinghua University, Beijing 100084, China

• WANG Yan

  Institute of Animal Genetics and Breeding, Sichuan Agricultural University

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