スポンサーリンク
Institute of Industrial Science, university of Tokyo | 論文
- MONOCRYSTAL SPUTTERING BY THE COMPUTER SIMULATION CODE ACOCT
- Control of Current Hysteresis Effects in a GaAs/n-AlGaAs Quantum Trap Field Effect Transistor with Embedded InAs Quantum Dots
- Origin of Critical Substrate Bias in Variable Threshold Voltage Complementary MOS (VTCMOS)
- Origin of Critical Substrate Bias in Variable Threshold Voltage CMOS
- Fabrication of InGaAs Strained Quantum Wire Structures Using Selective-Area Metal-Organic Chemical Vapor Deposition Growth
- Observation of Molecular Orientation Induced by Capillary Wave
- 1.54 μm Electroluminescence by Electron Impact Excitation of Er Atoms Doped in InP
- Development of Genetic Algorithm Based 3D-PTV Technique
- 光触媒最新技術 非接触酸化反応と光触媒リソグラフィー法 (特集 可視光型光触媒と光触媒技術の新展開)
- Application of the Degenerated Timoshenko Beam Element Using the Adaptively Shifted Integration Technique to Elastic-Plastic Analyses Considering Large Displacements : Rotations
- Position estimation of a mobile robot using images of a moving target in intelligent space with distributed sensors
- Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]-Directed Channels at Room Temperature
- Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor
- Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect
- Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Re-examination of Impact of Intrinsic Dopant Fluctuations on SRAM Static Noise Margin
- Surface Potential Imaging on InAs Low-Dimensional Nanostructures Studied by Kelvin Probe Force Microscopy
- Kelvin Probe Force Microscopy for Surface Potential Measurements on InAs Nanostructures Grown on (110) GaAs Vicinal Substrates
- Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation
- Study of Dislocations in CsI by Simultaneous Measurements of Ultrasonic Velocity and Attenuation : Physical Acoustics