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Institute For Solid State Physics University Of Tokyo | 論文
- Resonant Photoemission of Rare Earth Compounds : Chapter 4. Optical Properties : 4-1. Photoemission and inverse Photoemission Studies of Electronic Structures
- Magnetic Properties of CeScSi Single Crystal
- Photoemission Spectroscopy of Spinel-Type CuV_2S_4 Single Crystal(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Charge Disproportionation in Highly One-Dimensional Molecular Conductor TPP[Co(Pc)(CN)_2]_2(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Giant Negative Magnetoresistance Reflecting Molecular Symmetry in Dicyano (phthalocyaninato) iron Compounds (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Contribution of Degenerate Molecular Orbitals to Molecular Orbital Angular Momentum in Molecular Magnet Fe(Pc)(CN)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Contribution of Degenerate Molecular Orbitals to Molecular Orbital Angular Momentum in Molecular Magnet Fe(Pc)(CN)_2
- Neutron Diffraction Study of Magnetic Structure of the Heavy Fermion Antiferromagnet Ce(Ni_Rh_x)_2Ge_2
- Spectroscopy Studies of Temperature-Induced Valence Transition on EuNi_2(Si_Ge_x)2 around Eu 3d-4f, 4d-4f and Ni 2p-3d Excitation Regions
- Direct Observation of the Multiple Spin Gap Excitations in Two-Dimensional Dimer System SrCu_2(BO_3)_2
- Scaling Approach to Glassy Stationary States of Spin-Glasses under Chaos Effects
- Determination of helicidum and its metabolites in dog plasma by LC/UV/MS/MS and its application to pharmacokinetic studies
- EPR Study of the Quasi One-Dimensional Alternating Antiferromagnet CsFeS_2
- Visibility Measurement with an X-Ray Interferometer Using a Coincidence Technique : Instrumentation, Measurement, and Fabrication Technology
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
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