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Infineon Technologies | 論文
- A Novel Embedded Extension SiGe (e^2SiGe) Process for PFET Performance Enhancement for 45nm Technology and beyond
- High Performance and Low Leakage CMOS for 45nm Low Power Technology and Beyond
- Reliability Issues in High-k Stacks
- Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model
- Magnetic Tunnel Junctions and Architectures for their Use in Magnetic RAMs
- Practical Inverse Modeling with SIESTA (Special lssue on SISPAD'99)
- The Impact of Lens Distortion on Dynamic Imaging in Photolithography
- High-K/Metal Gate MOSFETsにおける新しいレイアウト依存性(IEDM特集(先端CMOSデバイス・プロセス技術))
- High-K/Metal Gate MOSFETs における新しいレイアウト依存性
- Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model