スポンサーリンク
Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan | 論文
- A Comparative Study of Plasma Source-Dependent Charging Polarity in MOSFETs with High-k and SiO_2 Gate Dielectrics
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-k Metal--Oxide--Semiconductor Field-Effect Transistor
- Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors
- Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
- Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers
- Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-$k$ and SiO2 Gate Dielectrics