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Graduate School Of Science | 論文
- Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
- Control of Solid Phase Epitaxial Growth in the Pd-Si System by Carbon Ion Implantation
- Recrystallization of Silicon-on-Insulator Structures by Sinusoidally-Scanned Electron Beams
- Formation of Shallow p^+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers
- Radiation Damage in Epitaxial CaF_2 Films on Si Substrates by Ar^+ Ion Implantation
- Epitaxial Silicide Films for Integrated Circuits and Future Devices : A-1: OPENING
- Solid Phase Epitaxy of Highly-Doped Si: B Films Deposited on Si(100) Substrates
- Electrical Activation of B Ions Implanted in Deposited-Amorphous Si during Solid Phase Epitaxy
- Scannning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates
- 1P416 A theoretical study on the proteinquake of photoactive yellow protein(17. Light driven system,Poster Session,Abstract,Meeting Program of EABS &BSJ 2006)
- Lattice-Matched Epitaxial Growth of Semiconductor Films onto Insulator (Mixed Fluoride)/Si Structures : A-6: SILICON CRYSTALS
- Preparation of Yb-Ba-Cu-O Superconducting Films Using an Arc Discharge Evaporation Method
- 26aPS-54 Research on the Preparation and Properties of (Mo_xCu_)Sr_2YCu_2O_y
- 26aPS-53 Research on preparation of (Mo_Cu_)Sr_2(Y_xCa_)Cu_2O_y and its superconductivity