スポンサーリンク
Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan | 論文
- Preparation of Freestanding GaN Wafers by Hydride Vaper Phase Epitaxy with Void-Assisted Separation
- Observation of Triple-Period-A Type Atomic Ordering in Sb-Doped Ga_In_P Alloys
- Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
- "Incipient Orthorhombic" Phase in Ba_2YCu_3O_ Ctystals : Electrical Properties of Condensed Matter
- Orthorhombic-II Phase in Ba_2YCu_3O_ Crystals : Electrical Properties of Condensed Matter
- Incipient Twinning in Ba_2YCu_3O_ Crystals
- Crystal Growth Faults in Superconductor Tl-Ba-Ca-Cu-O Oxide Crystals : Condensed Matter
- In Situ Observation of Oxidation and Etching of Silicon by Ultra-High-Vacuum Transmission Electron Microscopy
- Electro-Optic Properties of Pb(Zr1-xTix)O3 ($X=0$, 0.3, 0.6) Films Prepared by Aerosol Deposition
- Nonlinear-Optic Silicon-Nanowire Waveguides
- Atomic Arrangement in a Triple-period A-type Ordered GaInP Layer Grown with Sb Addition during Metal Organic Vapor Phase Epitaxy Observed by Cross Sectional Scanning Tunneling Microscope
- Properties and Lithographic Capability of Sulfonium Salts with Aromatic Cyclic Ketone Group for ArF Chemically Amplified Resist
- Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation
- Large Optical Transmission through a Single Subwavelength Hole Associated with a Sharp-Apex Grating