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Fujitsu Laboratories | 論文
- High-Performance X-Ray Mask Fabrication Using TaGeN Absorber and Dummy Pattern Method for Sub-100nm Proximity X-Ray Lithography : Instrumentation, Measurement, and Fabrication Technology
- A Bisection Method-Based Controlling Scheme for Phased Array Antenna with Slow Switching Speed-Phase Shifters
- Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Growth of InGaAsP Quaternary by Chloride VPE
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
- Inhomogeneous Distribution of Avalanche Multiplication in InP APDs
- Calculation of Impurity Concentrations in LPE InP Layers
- A New Type GaAlAs Monolithic Lensed LED : B-2: GaAs FET/LED AND DETECTOR
- Monte Carlo Simulation of Gunn Domain Formations
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy