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Fujitsu Laboratories | 論文
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- GaAs MMIC for 2.4 GHz Wireless LAN Applications (Special Issue on Microwave Devices for Mobile Communications)
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well
- Special Issue on Network Operations and Management
- A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n^+-Layer using MOCVD
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- Activation volumes in magnetic recording media
- MFM and LTEM analysis of written bits in longitudinal media
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- B-1-13 Measurement of Full Polarimetric Path Gain in LOS Microcell Environment
- Clustering results of estimated MIMO double-directional channel data of a small macrocell (アンテナ・伝播)
- Experimental Analysis and Site-Specific Modeling of Channel Parameters at Mobile Station in an Urban Macrocellular Environment