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Fujitsu Laboratories Ltd | 論文
- Global Interpolation in the Segmentation of Handwritten Characters Overlapping a Border
- Quantitative Evaluation of Improved Global Interpolation in the Segmentation of Handwritten Numbers Overlapping a Border (Special Issue on Character Recognition and Document Understanding)
- An autonomous mobile robot for carrying food trays to the aged and disabled
- A 60-GHz Injection-Locked Frequency Divider Using Multi-Order LC Oscillator Topology for Wide Locking Range
- Multi-Cycle Path Detection for Sequential Circuits and Its Application to Real Designs
- An Iterative Improvement Method for State Minimization of Incompletely Specified Finite State Machines (Special Issue on Synthesis and Verification of Hardware Design)
- Incoherent subnetwork magnetization reversal and thermal stability issues in TbFeCo amorphous thin films
- Uniqueness Enhancement of PUF Responses Based on the Locations of Random Outputting RS Latches
- A New Algorithm for Boolean Matching Utilizing Structural Information : PAPER Special Issue on Synthesis and Verification of Hardware Design
- Detailed Cost Estimation of CNTW Forgery Attack against EMV Signature Scheme
- Preimage Attacks on the Step-Reduced RIPEMD-128 and RIPEMD-160
- Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
- MINT-An Exact Algorithm for Finding Minimum Test Set (Special Section on VLSI Design and CAD Algorithms)
- Experimental Analysis of Cheon's Algorithm against Pairing-friendly Curves
- Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
- Improved Electron Mobility of Two-Dimensional Electron Gas Formed Area-Selectively in GaAs/AlGaAs Heterostructure by Focused Si Ion Beam Implantation and MBE Overgrowth
- Uniqueness Enhancement of PUF Responses Based on the Locations of Random Outputting RS Latches
- Impact of Thermomechanical Stresses on Bumpless Chip in Stacked Wafer Structure
- Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
- New Model of Fe Diffusion in Highly Resistive Fe-Doped Buffer Layer for GaN High-Electron-Mobility Transistor