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Frontier Collaborative Research Center, Tokyo institute of Technology | 論文
- Bistable Fluctuation of SeO^_4 Centers Doped in Partially Deuterated KH_2PO_4 Observed by ESR
- Color Correction of Pathological Images Based on Dye Amount Quantification
- Image Association Using a Complex-Valued Associative Memory Model
- Correlation between Ferroelectricity and Grain Structures of Face-to-Face Annealed Strontium Bismuth Tantalate Thin Films
- Thermoelectric Properties of P -Type BaSnO3 Ceramics Doped with Cobalt
- Significant Enhancement of Bi_La_Ti_3O_ Ferroelectricity Derived by Sol-Gel Method
- Dynamic Simulation of the Left Coronary Circulation Using an Electronic Circuit Model for Coronary Vessel
- Study of the Endo-Epi Flow by Using an Electronic Circuit Model of the Coronary Vessel
- Thermoelectric Properties of P-Type BaSnO_3 Ceramics Doped with Cobalt
- Epitaxial Growth of Ferroelectric YMnO_3 Thin Films on Si (111) Substrates by Molecular Beam Epitaxy
- Phenomenological Dynamical Theory of KH_2PO_4 in Paraelectric Phase
- Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) Structures Using Ferroelectric (Bi, La)_4Ti_3O_ Films
- Characterization of the Sc_2O_3/La_2O_3 High-κ Gate Stack by STM
- Influence of Thermal Annealing on Chemical Structure of Lanthanum oxide/Si Interfacial Transition Layer
- Raman Scattering Study of (NH_4)_3H(SeO_4)_2 Single Crystal in High Temperature Phases : Condensed Matter: Electronic Properties, etc.
- Observation of Compositional Fluctuation by Scanning Superconducting Quantum Interference Device (SQUID) Microscope in Superconducting La1.8Sr0.2CuO4
- Damage-Free and Hydrogen-Free Nitridation of Silicon Substrate by Nitrogen Radical Source
- Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films
- Bipolar Room Temperature Ferromagnetic Semiconductor LaMnOP
- Erratum: "Bipolar Room Temperature Ferromagnetic Semiconductor LaMnOP"