Bipolar Room Temperature Ferromagnetic Semiconductor LaMnOP
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概要
- 論文の詳細を見る
We have discovered a high-temperature ferromagnetic semiconductor in which carrier polarity can be changed by impurity doping. A layered compound of lanthanum manganese oxy-phosphide LaMnOP, which is a ferromagnetic material with a Curie temperature of ${\sim}320$ K, exhibits bipolar conduction by the substitution of La3+ sites with Ca2+ (hole doping) or Zr4+ (electron doping). Ferromagnetic interaction between the Mn2+ ions is changed in opposite direction by the carrier doping of a different charge polarity; the Curie temperature ($T_{\text{c}}$) is monotonically increased to ${\sim}600$ K by the hole doping, whereas the ferromagnetic interaction is remarkably reduced by the electron doping and 5% Zr4+-doped LaMnOP becomes paramagnetic. This finding provides an opportunity to realize bipolar magnetic transistors that can operate at room temperature.
- Japan Society of Applied Physicsの論文
- 2005-10-10
著者
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Hirano Masahiro
Erato-sorst Japan Science And Technology Agency (jst) In Frontier Research Center Tokyo Institute Of
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Hosono Hideo
Frontier Collaborative Research Center Tokyo Institute Of Technology
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KAMIYA Toshio
ERATO-SORST, Japan Science and Technology Agency (JST), in Frontier Research Center, Tokyo Institute
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MOTOMITSU Eiji
Frontier Collaborative Research Center, Tokyo Institute of Technology
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Yanagi Hiroshi
Materials And Structures Laboratory Tokyo Institute Of Technology
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Motomitsu Eiji
Frontier Collaborative Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Hosono Hideo
Frontier Collaborative Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Kamiya Toshio
ERATO-SORST, JST, in Frontier Collaborative Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Hirano Masahiro
ERATO-SORST, JST, in Frontier Collaborative Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Erratum: "Bipolar Room Temperature Ferromagnetic Semiconductor LaMnOP"