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Frontier Collaborative Research Center, Tokyo institute of Technology | 論文
- Characteristics of Paired Bi_La_xTi_3O_ (BLT) Capacitors Suitable for 1T2C-Type FeRAM
- Recognition of the Atomic Terminating Layer in Perovskite Oxide Substrates by Reflection High Energy Electron Diffraction
- Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy_2O_3/Si(100) Diode Characteristics
- The Effect of Leptin, Tumor Necrosis Factor-α (TNF-α), and Nitric Oxide (NO) Production on Insulin Resistance in Otsuka Long-Evans Fatty Rats
- Effects of Nω-nitro-L-arginine-methyl-ester (L-NAME) on the production of leptin and tumor necrosis factor-α (TNF-α) in vivo and in vitro
- Calculation of Vapor-Liquid Equilibrium Using Group Solubility Parameter Model
- Data Retention Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Diodes with SrBi_2Ta_2O_9 Ferroelectrics and Al_2O_3 Buffer Layers
- Preaparation of Ferroelectric Thin Films Using Sol-Gel Solutions Dissolved in Supercritical Carbon Dioxide
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Preparation of Bi_La_Ti_3O_ Films on Ruthenium Electrodes
- A New Circuit Simulation Model of Ferroelectric Capacitors
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si Metal Ferroelectric Insulator Semiconductor Structure for FET-Type Ferroelectric Memory Applications
- A Novel Simulation Program with Integrated Circuit Emphasis (SPICE) Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures
- Fabrication and Characterization of Pt/(Bi, La)_4Ti_3O_/Si_3N_4/Si MFIS Structure for FET-Type Ferroelectric Memory Applications
- A Novel SPICE Model of Ferroelectric Capacitors Using Schmitt Trigger Circuit
- Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi_2Ta_2O_9/Pt/SrTa_2O_6/SiON/Si Structures Operating at 3.5V
- Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor(MFIS)-and Metal-Ferroelectric-Metal-Insulator-Semiconductor(MFMIS)-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2O_6/SiON Buffer Layer
- Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi_2Ta_2O_9 Film and SrTa_2Ta_2O_6/SiON Buffer Layer
- ESR Study on the SeO^_4 Radical in RbH_2PO_4