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Faculty of Science and Technology, Meijo University | 論文
- GSMaP Passive Microwave Precipitation Retrieval Algorithm : Algorithm Description and Validation(2. Global Satellite Mapping of Precipitation (GSMaP) Project,Precipitation Measurements from Space)
- Evaluation of the Effects of the Orbit Boost of the TRMM Satellite on PR Rain Estimates(1. Precipitation Radar (PR),Precipitation Measurements from Space)
- Subsurface structure and faulting of the Median Tectonic Line, southwest Japan inferred from GPS velocity field
- Measurement of Absolute Densities of Si, SiH and SiH_3 in Electron Cyclotron Resonance SiH_4/H_2 Plasma ( Plasma Processing)
- Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
- GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Air-Cooling Effects of Fins on a Motorcycle Engine
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- Structure of Self-Assembled Monolayers from Amphiphilic Diacetylene Derivatives on Indium-Tin Oxide
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Optical Transitions of the Mg Acceptor in GaN
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- 24-P-06 Phase Transition and Microwave Dielectric Properties of Nd_2Ba(Cu_Zn_x)O_5 (x=0 to 0.55) by Zn Substitution for Cu