スポンサーリンク
Faculty Of Engineering Tokyo Institute Of Technology | 論文
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Taper-Shape Dependence of Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA)
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Avoidance of Hardening in Cast Iron Weld Metal by Use of Magnetic Oscillating Effect of Welding Arc
- Comments on the Security Proofs of Some Signature Schemes Based on Factorization(Information Security)
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Investigation of Ultrafast Carrier Dynamics in Quantum Wire by Terahertz Time-Domain Spectroscopy
- Femtosecond Pump-Probe Spectroscopy of GaAs Crescent Quantum Wires
- Excitation Wavelength Dependence of Terahertz Electromagnetic Wave Generation from Quantum Wire
- Ultrafast Coherent Control of Excitons and Exciton-Polaritons in Quantum Nanostructure
- Ultrafast Coherent Control of Excitons in Quantum Nano-Structures
- Properties of Ferroelectric Memory FET Using Sr_2(Ta,Nb)_2O_7 Thin Film
- Application of Sr_2Nb_2O_7 Family Ferroelectric Films for Ferroelectric Memory Field Effect Transistor
- Study of Ferroelectric Materials for Ferroelectric Memory FET(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Properties of Ferroelectric Memory with Ir System Materials as Electrodes(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)