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Electronics Research Laboratory Nissan Motor Co. Ltd. | 論文
- Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
- Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
- High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
- Effects of Electrode Geometry on Breakdown Voltage of a Single-Gap Pseudospark Discharge
- Effects of Electrode Geometry and Gas Pressure on Breakdown Voltage of a Pseudospark Discharge
- Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
- Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
- Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
- Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
- Microstructure of Visible Light Emitting Porous Silicon
- Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
- Fine Structure of Porous Si with Visible Photoluminescence
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method