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Department of Precision Science and Technology, Osaka University | 論文
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)
- High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
- High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmospheric Pressure Plasma CVD
- Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
- Theoretical Study on the Scanning Tunneling Microscopy Image of CI-Adsorbed Si(001)
- Geometry and Conduction of an Infinite Single-Row Gold Wire
- First-Principles Calculations of Conductance for Na Quantum Wire
- Images of Scanning Tunneling Microscopy on the Si(001)-p(2 × 2) Reconstructed Surface
- Optical Detection of the Hyperfine Interaction of the F Center in KCL in the Absence of Resonant Oscillating Fields
- On "the Anomalous Effect" of the Magnetic Circular Polarization of the F Center Luminescence
- Magnetic Nature of the Relaxed Excited State of F Centers and Spin Flipping Processes in the Optical Pumping Cycle
- Isospin Degeneracy and Veneziano Representation in Pion-Nucleon Scattering
- Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
- Evaluation of a Pylorus-Preserving Gastrectomy for Patients Preoperatively Diagnosed with Early Gastric Cancer Located in the Middle Third of the Stomach
- Growth of Crystalline Silicon on a Cryogenic Substrate by Photochemical Reaction in a Condensed Phase
- Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
- The Resonant Secondary Emission of the F Center in KCI at 80 K
- Optical Detection of the Paramagnetic Resonance of the Relaxed Excited State of the F_A (Na) Centers in KCl
- First-Principles Study on Electronic Structure of Dangling Bond at Ge/GeO2 Interfaces