スポンサーリンク
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan | 論文
- Geometry and Conduction of an Infinite Single-Row Gold Wire
- First-Principles Calculations of Conductance for Na Quantum Wire
- Images of Scanning Tunneling Microscopy on the Si(001)-p(2 × 2) Reconstructed Surface
- First-Principles Study on Electronic Structure of Dangling Bond at Ge/GeO2 Interfaces
- Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst
- Roughening Surface of Layered Manganite La0.5Sr1.5MnO4 by Scanning Tunneling Microscopy
- Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma
- Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid
- Improvement of Thickness Uniformity of Silicon on Insulator Layer by Numerically Controlled Sacrificial Oxidation Using Atmospheric-Pressure Plasma with Electrode Array System
- Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Interferometry
- First-Principles Study on Electron-Conduction Properties of Single-Row Gold Nanowires
- First-Principles Calculation of Tunneling Current of H2- or NH3-Adsorbed Si(001) Surface in Scanning Tunneling Microscopy
- Bias-Assisted Photochemical Planarization of GaN(0001) Substrate with Damage Layer