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Department of Precision Science and Technology, Graduate School of Engineering, Osaka University | 論文
- Surface Hall Potentiometry to Characterize Functional Semiconductor Films
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- Atomic Structure of Si(001)-c(4×4) Formed by Heating Processes after Wet Cleaning and Its First-Principles Study
- Genome-wide microsatellite analysis of focal nodular hyperplasia : a strong tool for the differential diagnosis of non-neoplastic liver nodule from hepatocellular carcinoma
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- First-Principles Evaluations of Machinability Dependency on Powder Material in Elastic Emission Machining
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- First-Principles Study on Electron Conduction Property of Monatomic Sodium Nanowire
- Characterization and Control of Native Oxide on Silicon
- Role of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
- Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
- Scanning Surface Hall Potentiometry on Semiconductor Wafers
- Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Liquid Sensing by Nano-Gap Device with Treated Surface
- Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
- Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope
- Development of Nanao-Gap Device for Biosensor