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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors : The Influence of the Amorphous Silicon Deposition Temperature
- Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
- Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
- Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane
- Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- Efficiency Improvement of Cu(InGa)Se_2 Thin Film Solar Cells with a High Ga Composition Using Rapid Thermal Annealing
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Improvement in Aspect Ratio of P-GaAs Oxide Fabricated by Atomic Force Microscope (AFM)-Based Nanolithography Using Pulsed Voltage
- Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation
- Unit for the Precise Measurement of Electron Diffraction Intensities by Gas Molecules
- InP Hot Electron Transistors with a Buried Metal Gate
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Proposal for a Solid State Biprism Device
- A Multi-Stage 60GHz CMOS LNA Using Dual Noise-Matching Technique
- In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x
- In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films
- Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films
- Generation of Electron Cyclotron Resonance Plasma in the VHF Band