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Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea | 論文
- Enhancement of Formation in Boron-Carbon-Nitrogen Nanotubes by Plasma Rotating Electrode Process
- Thin Film Transistors with Ink-Jet Printed Amorphous Oxide Semiconductors
- Crystallization Properties of Ge1-xSbx Thin Films ($x = 0.58{\mbox{--}}0.88$)
- Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic–Inorganic Hybrid Dielectrics
- Fabrication of Multilevel Switching High Density Phase Change Data Recording Using Stacked GeTe/GeSbTe Structure
- Study on the Electrical and Thermal Conductivity of Ordered Mesoporous TiO2 Thin Film Incorporated with Pt Nanoparticles
- Effects of Vertical Alignment of Liquid Crystals on Rubbed Polymer Surfaces Using Transparent Electrodes
- Diffusion-Controlled Glow Discharge Pressure Extended by the Multi-Dual Microhollow Cathode Configuration for Flat Lighting
- Solution-Processed White Light-Emitting Diode Utilizing Hybrid Polymer and Red--Green--Blue Quantum Dots
- Enhancement of Cycling Performance by Li2O--Sn Anode for All-Solid-State Batteries
- Excitation Energy Transfer of Metastable Krypton Atoms in Kr–He–Xe Low Pressure Glow Discharge for Mercury-Free Lighting
- Fabrication and Characterization of Direct-Patternable ZnO Films Containing Pt Nanoparticles
- Alignment Properties of Liquid Crystal Molecules with Negative Dielectric Anisotropy on Hydrogenated Silicon Carbide Films
- Characterization of CF4 Plasma-Treated Indium–Tin-Oxide Surfaces Used in Organic Light-Emitting Diodes by X-ray Photoemission Spectroscopy
- Channel Strain Measurement of Si
- Erratum: "Characterization of CF4 Plasma-Treated Indium–Tin-Oxide Surfaces Used in Organic Light-Emitting Diodes by X-ray Photoemission Spectroscopy"
- Channel Strain Measurement of Si_C_x Structures : Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation