Thin Film Transistors with Ink-Jet Printed Amorphous Oxide Semiconductors
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概要
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We investigated the influence of the thickness of printed Ga–In–Zn-O (GIZO) channel on transistor performance. Semiconductor layers were ink-jet printed using sol–gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off-current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance.
- 2010-05-25
著者
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KOO Chang
Department of Materials Science and Engineering, Yeungnam University
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Jeong Youngmin
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Dongjo Kim
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Jooho Moon
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Kim Dongjo
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Keunkyu Song
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
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Youngmin Jeong
Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea
関連論文
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