Low-Temperature Solution-Deposited Oxide Thin-Film Transistors Based on Solution-Processed Organic–Inorganic Hybrid Dielectrics

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We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol–gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic–inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of ${<}10^{-10}$ A, a field-effect mobility of $3.3\times 10^{-2}$ cm2 V-1 s-1, and a low threshold gate voltage of ${\sim}2.4$ V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (${\sim}90$%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.
2010-05-25