Crystallization Properties of Ge1-xSbx Thin Films ($x = 0.58{\mbox{--}}0.88$)
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概要
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The binary phase-change material Ge1-xSbx films ($x = 0.58{\mbox{--}}0.88$) were deposited using a dc co-sputtering system to study their crystallization behaviors after heat treatment and laser irradiation. As the concentration of Sb in Ge1-xSbx thin films decreased, both the crystallization temperatures and sheet resistances of the amorphous and crystalline phases increased. The crystallization of Ge0.12Sb0.88 thin film was accompanied with Ge precipitation, which brings about a rough surface and poor optical reflectivity. The thin films around the eutectic composition showed different optical properties through their crystalline behaviors on a nanosecond scale. The Ge0.12Sb0.88 thin film represented a large change in reflectivity when treated under a weak laser power and at a very short crystallization time (25 ns).
- 2011-04-25
著者
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LEE Hong-Lim
Department of Ceramic Engineering, School of Material Science and Engineering, College of Engineerin
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KIM Byeong
Department of Material Science and Engineering, Pusan National University
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BAE Jun-Hyun
Department of Ceramic Engineering, Yonsei University
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Lee Hong-lim
Department Of Ceramic Engineering School Of Material Science And Engineering College Of Engineering
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Bae Jun-hyun
Department Of Ceramic Engineering Yonsei University
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Jeong Seong-Min
Korea Institute of Ceramic Engineering and Technology (KICET), Seoul 153-801, Korea
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Choi Soon-Mok
Korea Institute of Ceramic Engineering and Technology (KICET), Seoul 153-801, Korea
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Kim Byeong
Department Of Internal Medicine And Liver Research Institute Seoul National University College Of Me
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Lee Hong-Lim
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Kim Byeong
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Bae Jun-Hyun
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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