A Comparative Study between Total Thickness Variance and Site Flatness of Polished Silicon Wafer : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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Lee H‐l
Yonsei Univ. Seoul Kor
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OH Han-Seog
Department of Ceramic Engineering, School of Material Science and Engineering, College of Engineerin
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LEE Hong-Lim
Department of Ceramic Engineering, School of Material Science and Engineering, College of Engineerin
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Lee Hong-lim
Department Of Ceramic Engineering School Of Material Science And Engineering College Of Engineering
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Oh Han-seog
Department Of Ceramic Engineering School Of Material Science And Engineering College Of Engineering
関連論文
- Simulation for thickness change of PRAM recording layer
- A Comparative Study between Total Thickness Variance and Site Flatness of Polished Silicon Wafer : Semiconductors
- Phase Transformation of Single Crystalline Silicon by Scratching
- Crystallization Properties of Ge1-xSbx Thin Films ($x = 0.58{\mbox{--}}0.88$)
- Influence of Silicon Doping on the Properties of Sputtered Ge2Sb2Te5 Thin Film
- Determination of Effective Nanoindentation Range for Hard (Ti,Al)N Thin Film
- Phase Transformation of Single Crystalline Silicon by Scratching