スポンサーリンク
Department of Materials Science and Engineering, National Tsing-Hua University | 論文
- Structure and Dielectric Properties of SrTiO_3 Films Prepared by Pulsed Laser Deposition Technique
- Characteristics of BaTiO_3 Films Prepared by Pulsed Laser Deposition
- Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon
- Selected-area Deposition of Diamond Films on Silicon Nitride-coated Silicon Substrates Using Negatively Biased Microwave Plasma Enhanced Chemical Vapor Deposition Technique
- Influence of Buffer Materials on the Pyroelectric Properties of (Pb_La_)TiO_3 Thin Films
- Interdiffusion in (Pb_La_x)(Zr_xTi_)_O_3/SrRuO_3> Multilayer Thin Films Examined by Secondary Ions Mass Spectroscopy
- Crystallization Characteristics of LaNiO_3 Layers and Their Effect on Pulsed Laser Deposited (Pb_La_x)(Zr_yTi_)O_3 Thin Films
- Sol-Gel Derived Pb(Zr, Ti)O_3 Heterolayered Films by Single-Annealing
- The Microstructure of As Precipitates in Si Delta-Doped GaAs Grown by Low-Temperature Molecular Beam Epitaxy
- Epitaxial Growth of C54 TiSi_2 on Si (001) as Revealed by High Resolution Transmission Electron Microscope
- Epitaxial Growth of TiN(100) on Si(100) by Reactive Magnetron Sputtering at Low Temperature
- Epitaxial Growth of C54 TiSi_2 on Si(001) by Self-Aligned Process
- Dual-Layer Structure of Ti on Al_2O_3(0001) Grown Epitaxially at Room Temperature
- Heteroepitaxial TiN of Very Low Mosaic Spread on Al_2O_3
- Epitaxial Growth of TiN on Al_2O_3 at Cryogenic Temperature
- Epitaxial Growth of TiSi_2 (C49) on (001)Si by Rapid Thermal Annealing
- Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures
- Influence of Interfacial Oxide on Self-Alignment Silicide Process
- Terahertz Response of Bulk Ba(Mg_Ta_)O_3
- Effect of Ba_5Ta_4gO_ Incorporation on Sintering Behavior and Microwave Dielectric Properties of Ba(Ma_Ta_)O_3 Materials