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Department of Materials Engineering, School of Engineering, University of Tokyo | 論文
- Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth
- Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-Gap Selective Area Metalorganic Vapor Phase Epitaxy
- Effect of Partial Pressure of TiCl_4 and NH_3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity
- Improvement of TiN Flow Modulation Chemical Vapor Deposition from TiCl_4 and NH_3 by Introducing Ar Purge Time
- Threshold Voltage Control in Pentacene TFTs by Perfluoropentacene Stack
- Performance Recovery of n-channel Perfluoropentacene Thin Film Transistors by High Vacuum Annealing
- Ion-Implanted p/n Junction Characteristics in p- and n-type Germanium
- Complex Impedance Analysis and Photo-induced Effects of Semiconducting Pentacene Films
- Accumulated Carrier Density Dependence of Pentacene TFT Mobility Determined by Split C-V Technique
- In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) surfaces
- Post-deposition Annealing Effects on Interface States Generation in HfO_2/SiO_2/Si MOS Capacitors
- Mobility Improvement of Pentacene Thin Film Transistors by Introduction of H_2 during Evaporation
- Interface Layer Control at Y_2O_3/Ge by N_2 and O_3 Annealing on Ge(100) and Ge(111) Surfaces
- Strong Fermi-level Pinning of Wide Range of Work-function Metals at Valence Band Edge of Germanium