Post-deposition Annealing Effects on Interface States Generation in HfO_2/SiO_2/Si MOS Capacitors
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Kyuno K.
Department Of Materials Engineering School Of Engineering University Of Tokyo
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KITA K.
Department of Earth and Planetary Physics, Graduate School of Science, University of Tokyo
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TORIUMI A.
Department of Materials Engineering, School of Engineering, University of Tokyo
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SASAGAWA M.
Department of Materials Science, School of Engineering, The University of Tokyo
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Toriumi A.
Department Of Materials Engineering School Of Engineering University Of Tokyo
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Kita K.
Department Of Materials Engineering School Of Engineering University Of Tokyo
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Toriumi A.
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Sasagawa M.
Department Of Materials Science School Of Engineering The University Of Tokyo
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