Interface Layer Control at Y_2O_3/Ge by N_2 and O_3 Annealing on Ge(100) and Ge(111) Surfaces

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概要

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2006-09-13

著者

NISHIMURA T.
Department of Mechanical Engineering, Graduate School of Science and Engineering, Yamaguchi Universi
KITA K.
Department of Earth and Planetary Physics, Graduate School of Science, University of Tokyo
TORIUMI A.
Department of Materials Engineering, School of Engineering, University of Tokyo
Toriumi A.
Department Of Materials Engineering School Of Engineering University Of Tokyo
NOMURA H.
Department of Materials Engineering, School of Engineering, The University of Tokyo
Kita K.
Department Of Materials Engineering School Of Engineering University Of Tokyo
Toriumi A.
Department Of Materials Engineering School Of Engineering The University Of Tokyo
Nishimura T.
Department Of Materials Engineering School Of Engineering University Of Tokyo

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