Field-Dependent Mobility of Highly Oriented Pentacene (C_<22>H_<14>) Thin Film FETs
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Kyuno K.
Department Of Materials Engineering School Of Engineering University Of Tokyo
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Toriumi A.
Department Of Materials Engineering School Of Engineering University Of Tokyo
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Kyuno K.
Department Of Materials Science Graduate School Of Engineering The University Of Tokyo
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KOMODA T.
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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ENDO Y.
Department of Materials Science, Graduate School of Engineering, The University of Tokyo
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Toriumi A.
Department Of Materials Engineering School Of Engineering The University Of Tokyo
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Toriumi A.
Department Of Materials Science Graduate School Of Engineering The University Of Tokyo
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Komoda T.
Department Of Materials Science Graduate School Of Engineering The University Of Tokyo
関連論文
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- Complex Impedance Analysis and Photo-induced Effects of Semiconducting Pentacene Films
- Accumulated Carrier Density Dependence of Pentacene TFT Mobility Determined by Split C-V Technique
- In-Plane Anisotropy of MOS Inversion Layer Mobility on Silicon (100), (110) and (111) surfaces
- Post-deposition Annealing Effects on Interface States Generation in HfO_2/SiO_2/Si MOS Capacitors
- Ground States of Ca Isotopes
- Mobility Improvement of Pentacene Thin Film Transistors by Introduction of H_2 during Evaporation
- Interface Layer Control at Y_2O_3/Ge by N_2 and O_3 Annealing on Ge(100) and Ge(111) Surfaces
- Strong Fermi-level Pinning of Wide Range of Work-function Metals at Valence Band Edge of Germanium
- Field-Dependent Mobility of Highly Oriented Pentacene (C_H_) Thin Film FETs
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