スポンサーリンク
Department of Material and Life Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan | 論文
- Improvement in Discharge Delay Time by Accumulating Positive Wall Charges on Cathode MgO Protective Layer Surface in Alternating-Current Plasma Display Panels
- Accumulation and Decay Characteristics of Exoelectron Sources at MgO Protective Layer Surface in Alternating-Current Plasma Display Panels
- Thermal Robustness and Improved Electrical Properties of Ultrathin Germanium Oxynitride Gate Dielectric
- Subharmonic Synchronization of Picosecond Yb Fiber Laser to Picosecond Ti:Sapphire Laser for Stimulated Raman Scattering Microscopy
- La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
- Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
- Synchrotron Radiation Photoemission Study of Ge3N4/Ge Structures Formed by Plasma Nitridation
- Energy Distribution of Ion-Induced Secondary Electrons from MgO Surface
- Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation
- Monte Carlo Study of X-ray Generation from Film/Substrate Structure by Electron Impact
- Extension of Atomic Mixing, Surface Roughness and Information Depth Model for Auger Electron Spectroscopy Sputter-Depth Profile Using Tilted Cylindrical Mirror Analyzer
- Highly Sensitive Signal Detection in Stimulated Parametric Emission Microscopy Based on Two-Beam Interferometry
- Monte Carlo Simulation Study of Backscattered Electron Imaging in a Chemical Vapor Deposition Scanning Electron Microscope
- Surface Structure of Sc-O/W(100) System used as Schottky Emitter at High Temperature
- Sputter Depth Profiling of Multiple Short-Period BN $\mathbf{\delta}$-Doped Si by Work Function Measurement
- Fabrication of Fully Relaxed SiGe Layers with High Ge Concentration on Silicon-on-Insulator Wafers by Rapid Melt Growth