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Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology | 論文
- Outgassing Analysis in EUV Resist
- Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System
- Characteristics of CA Resist in EUV Lithography
- 直接エタノール形燃料電池のCO2生成に対する燃料流速,燃料濃度およびカソードガス酸素濃度の影響
- Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
- Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
- Preparation of SrBi_2Ta_2O_9 Thin Films by Metalorganic Chemical Vapor Deposition from Two New Liquid Organometallic Sources
- Separation between Surface Adsorption and Reaction of NH_3 on Si (100) by Flash Heating
- Atomic-Layer Surface Reaction of SiH_4 on Ge(100) ( Quantum Dot Structures)
- Quantum Effect on Helium Adsorbed in Y Zeolite : I. QUANTUM LIQUIDS AND SOLIDS : He in Restricted Geometry
- 0.8-Numerical-Aperture Two-Element Objective Lens for the Optical Disk
- Property Improvement of 75nm-thick Directly crystallized SrBi_2Ta_2O_9 Thin Films by Pulse-introduced Metalorganic Chemical Vapor Deposition at Low Temperature : Electrical Properties of Condensed Matter
- 燃料電池用アニオン交換膜のイオン伝導度に対するCO2濃度および通電による影響
- Mitigation of Low Outgassing and Small Line Edge Roughness for EUVL Resist
- Resist Outgassing by EUV Irradiation
- Fabrication of Aspherical Mirrors for Extreme Ultra-Violet Lithography (EUVL) Using Deposition Techniques
- A Novel Design of Three-Aspherical-Mirror Imaging Optics for Extreme Ultra-Violet Lithography
- Photothermal Beam Deflection (PBD) Image of Certain GaAs Wafers
- PAG study of PAG bonded resist for EUV and EB lithography
- Mitigation of low LER with PAG bonded resist for EUVL