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Department of Information and Communication Technology Tokai University | 論文
- Formation of Nanocrystalline Structures by Crystallization of Amorphous Fe-M-B (M=IVa to VIa Group Metal) Alloys
- An Experimental Study on Control Valve Cavitation : 1st Report, Diagnostics of Cavitation Vibration at High Pressure Reduction and at Low Valve Opening
- High Power Er^-Doped Fiber Amplifier Pumped by 1.48 μm Laser Diodes
- An 8 mW cw Er^-Doped Fiber Laser Pumped by 1.46 μm InGaAsP Laser Diodes
- Determination of Diffusion Coefficients of Self-Interstitials in Ice with a New Method of Observing Climb of Dislocations by X-Ray Topography
- High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals
- Microstructures in a Twinned Single Crystal of Tetragonal La_Ba_Cu_3O_ : Electrical Properties of Condensed Matter
- In-Situ Observation of Formation of Staking Faults in Ni_3Ga by Stretching Thin Foils in an Electron Microscope
- High Tilt Angle Ion Implantation into Polycrystalline Si Gates
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Boron Diffusion in Nitrided-Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Boron Diffusion in Nitrided Oxide Gate Dielectrics Leading to High Suppression of Boron Penetration in P-MOSFETs
- Sb Multiple Ion Implanted Channel for Low V_, Deep Submicron SOI-pMOSFETs
- Vth Rolloff Free Sub 0.1μm SOI MOSFETs Using Counter Doping into a Uniformly and Heavily Doped Channel Region
- Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide
- Superconductivity of ZrRuP
- Electrical Conductivity of Nickel Phosphides