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Department of Engineering and System Science National Tsing Hua University | 論文
- High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)
- High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)
- Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
- Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
- Simulation Study of Reflective-Type Carbon Nanotube Field Emission Display
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
- Aclarubicin and Low-Dose Cytosine Arabinoside in Combination with Granulocyte Colony-Stimulating Factor in Treating Acute Myeloid Leukemia Patients with Relapsed or Refractory Disease and Myelodysplastic Syndrome : A Multicenter Study of 112 Chinese Patie
- An Open-Cavity Electron Cyclotron Resonance Plasma/Ion Source
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Diluent Segregation in Crystalline/Amorphous Poly (vinylidene fluoride)/Poly (vinyl acetate) Blends. Segregation Distance Dominated by the Crystal Growth Kinetics
- Nonisothermal Crystallization of Compatible PCL/PVC Blends under Supercritical CO_2
- Experimental Characterization of an Inductively Coupled Plasma Discharge Using a Shape-Adjustable Coil
- Bandgap mapping for III-V quantum well by electron spectroscopy imaging
- Polycrystalline Silicon Thin-Film Flash Memory with Pi-Gate Structure and HfO2 Charge Trapping Layer
- ICONE11-36504 NONLINEAR STABILITY ANALYSIS FOR MULTIPLE BOILING CHANNEL SYSTEM BASED ON A MULTI-POINT REACTOR MODEL
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
- Effect of Teflon Covers on Thermoluminescence of CaF_2:Tm
- Simulation Study of Phase-Change Optical Recording Disks