スポンサーリンク
Department of Engineering, University of Tokyo | 論文
- Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO_2 Gate Dielectrics
- Fabrication and Characterization of AlN/InN Heterostructures
- Antiferromagnetic Domain Structure Imaging of Cleaved NiO(100) Surface Using Nonmagnetic Linear Dichroism at O K Edge : Essential Effect of Antiferromagnetic Crystal Distortion(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Prop
- Magnetic Domain Imaging of Ni Micro Ring and Micro Dot array by Photoelectron Emission Microscopy
- Electronic Band Structure of Transparent Conductor : Nb-Doped Anatase TiO_2
- Temperature-Dependent Soft X-ray Photoemission and Absorption Studies of Charge Disproportionation in La_Sr_xFeO_3(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- X-Ray Photoelectron Spectroscopy Study of Hetero-Interface between Manganese Pnictide and Mn-Zn Ferrite
- Epitaxial Growth of InAs on Single-Crystalline Mn-Zn Ferrite Substrates
- Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
- InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
- Effect of Impurity at SiO_2/Si Interface on 2D Hole Gas
- Generalized Grazing Incidence-Angle X-Ray Diffraction Studies on InAs Quantum Dots on Si(100) Substrates
- The Effect of Surface Cleaning by Wet Treatments and Ultra High Vacuum Annealing for Ohmic Contact Formation of P-Type GaN
- Spin State Analysis of Epitaxial Mn Compound Films Using High Resolution X-Ray Fluorescence
- Simulation of 2-Dimensional Hole Gas for PMOS Devices with Phosphorus Pile-Up
- Characterization of Phosphorus Pile-Up at the SiO_2/Si Interface
- New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
- K-Shell Ionization by C^+-C Collision in keV-MeV Energy Range
- Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation
- Chemical Bonding States and Band Alignment of Ultrathin AlOxNy/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition