スポンサーリンク
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan | 論文
- Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
- Electron Emission Properties of GaAsN/GaAs Quantum Well Containing N-Related Localized States : The Influence of Illuminance (Special Issue : Solid State Devices and Materials (1))
- A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
- Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se Solar Cell (Special Issue : Photovoltaic Science and Engineering)
- Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
- Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
- Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals
- A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy
- A Simple Growth Method to Produce a-Plane GaN Thick Films by Hydride Vapor Phase Epitaxy