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Department of Electronics, Faculty of Engineering, Nagaoka University of Technology | 論文
- Hydrogen-Radical-Assisted Chemical Vapor Deposition of SiN Films Using Si(CH_3)_4 and NH_2CH_3
- Chemical Vapor Deposition of Low Hydrogen Content Silicon Nitride Films Using Microwave-Excited Hydrogen Radicals
- Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane
- (100)-Oriented 3C-SiC Polycrystalline Film Grown on SiO_2 by Hot-Mesh Chemical Vapor Deposition Using Monomethylsilane and Hydrogen
- Low-Temperature Heteroepitaxial Growth of SiC on (100) Si Using Hot-Mesh Chemical Vapor Deposition
- Evaluation of the Correspondence between Carbon Incorporation and the Development of c(4×4) Domains
- Improvement in Crystallinity of ZnO Films Prepared by rf Magnetron Sputtering with Grid Electrode
- Structure of Microcrystalline Silicon Carbide Films Prepared by Hydrogen-Radical-Enhanced Chemical Vapor Deposition in Magnetic Field ( Plasma Processing)
- Extensive Control of Plasma Parameters in the Afterglow Region of Electron-Cyclotron-Resonance Plasma for the Epitaxial Growth of Cubic Gallium Nitride